收藏本站
ISL55110, ISL55111
Typical Performance Curves (See “Typical Performance Curves Discussion” on page 12) (Continued)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V H 12.0V
680pF
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
330pF
680pF
V H 12.0V
0.0
2.5
330pF
3.5
4.5
5.5
0.0
2.5
3.5
4.5
5.5
V DD (V)
FIGURE 29. tSkewR vs V DD
V DD (V)
FIGURE 30. tSkewF vs V DD
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
330pF
680pF
V DD 3.3V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
330pF
V DD 3.3V
680pF
0.0
3
6
9
12
0.0
3
6
9
12
V DD (V)
FIGURE 31. tSkewR vs V H
Typical Performance Curves
Discussion
r ON
The r ON Source is tested by placing the device in constant drive
high Condition and connecting -50mA constant current source
to the driver output. The voltage drop is measured from V H to
driver output for r ON calculations.
The r ON sink is tested by placing the device in constant driver
Low Condition and connecting a +50mA constant current
source. The voltage drop from driver out to ground is measured
for r ON calculations.
Dynamic Tests
All dynamic tests are conducted with ISL55110 and ISL55111
evaluation board(s) (ISL55110_11EVAL2Z). Driver loads are
soldered to the evaluation board. Measurements are collected
with P6245 active FET Probes and TDS5104 oscilloscope.
Pulse stimulus is provided by HP8131 pulse generator.
The ISL55110 and ISL55111 evaluation boards provide test
point fields for leadless connection to either an active FET
12
V DD (V)
FIGURE 32. tSkewF vs V H
probe or differential probe. TP- IN fields are used for
monitoring pulse input stimulus. TP- OA/B monitor driver
output waveforms. C 6 and C 7 are the usual placement for
driver loads. R 3 and R 4 are not populated and are provided for
user-specified, more complex load characterization.
Pin Skew
Pin skew measurements are based on the difference in
propagation delay of the two channels. Measurements are
made on each channel from the 50% point on the stimulus
point to the 50% point on the driver output. The difference in
the propagation delay for channel A and channel B is
considered to be Skew.
Both rising propagation delay and falling propagation delay are
measured and report as tSkewR and tSkewF.
50MHz Tests
50MHz Tests reported as no load actually include evaluation
board parasitics and a single TEK 6545 FET probe. However, no
driver load components are installed and C 6 through C 9 and
R 3 through R 6 are not populated.
FN6228.6
August 8, 2013
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ISL5629EVAL1 EVALUATION PLATFORM FOR ISL5629
ISL58125CRZ-EVAL EVAL BOARD FOR ISL58125CRZ
ISL58214CRZ-EVAL EVAL BOARD FOR ISL58214
ISL6115AEVAL1Z EVAL BOARD 1 FOR ISL6115A
ISL6115EVAL1Z EVAL BOARD ISL6115
ISL6115EVAL1 EVALUATION BOARD 12V ISL6115
ISL6119USBEVAL1 EVALUATION BOARD FOR ISL6119
ISL6121EVAL1 EVALUATION BOARD ISL6121
相关代理商/技术参数
ISL55111EVAL2Z 功能描述:EVALUATION BOARD FOR ISL55111 RoHS:是 类别:编程器，开发系统 >> 评估演示板和套件 系列:- 标准包装:1 系列:PCI Express® (PCIe) 主要目的:接口，收发器，PCI Express 嵌入式:- 已用 IC / 零件:DS80PCI800 主要属性:- 次要属性:- 已供物品:板
ISL55111IRZ 功能描述:IC MOSFET DRIVER DUAL HS 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 其它有关文件:VND5E050AK-E View All Specifications 产品培训模块:VIPower™ M0-5 Smart Power Devices 标准包装:1,000 系列:VIPower™ 类型:高端 输入类型:非反相 输出数:2 导通状态电阻:50 毫欧 电流 - 输出 / 通道:19A 电流 - 峰值输出:27A 电源电压:4.5 V ~ 28 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:24-SOP（0.295"，7.50mm 宽）裸露焊盘 供应商设备封装:PowerSSO-24 包装:带卷 (TR) 其它名称:497-11699-2VND5E050AKTR-E-ND
ISL55111IRZ-T 功能描述:IC MOSFET DRIVER DUAL HS 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1 系列:- 类型:高端 输入类型:非反相 输出数:1 导通状态电阻:85 毫欧 电流 - 输出 / 通道:2A 电流 - 峰值输出:6A 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:4-UFDFN 裸露焊盘，4-TMLF? 供应商设备封装:4-TMLF?（1.2x1.6） 包装:剪切带 (CT) 其它名称:576-1574-1
ISL55111IVZ 功能描述:IC MOSFET DRIVER DUAL HS 8-TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1 系列:- 类型:高端 输入类型:非反相 输出数:1 导通状态电阻:85 毫欧 电流 - 输出 / 通道:2A 电流 - 峰值输出:6A 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:4-UFDFN 裸露焊盘，4-TMLF? 供应商设备封装:4-TMLF?（1.2x1.6） 包装:剪切带 (CT) 其它名称:576-1574-1
ISL55111IVZ-T 功能描述:IC MOSFET DRIVER DUAL HS 8-TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1 系列:- 类型:高端 输入类型:非反相 输出数:1 导通状态电阻:85 毫欧 电流 - 输出 / 通道:2A 电流 - 峰值输出:6A 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:4-UFDFN 裸露焊盘，4-TMLF? 供应商设备封装:4-TMLF?（1.2x1.6） 包装:剪切带 (CT) 其它名称:576-1574-1
ISL55112 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:High-Speed Dual Precision CCD Driver
ISL55112EVAL1Z 制造商:Intersil Corporation 功能描述:ISL55112 EVALUATION BOARD 1 - ROHS COMPLIANT - 24 LD T - Bulk
ISL55112IRTZ 制造商:Intersil Corporation 功能描述:PB-FREE W/ANNEAL DUAL HIGH SPEED CCD DRIVER W/UNBALANCED INP - Rail/Tube